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aft09s220--02nr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 54 w rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 850 to 960 mhz. 900 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1400 ma, p out = 54 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 920 mhz 19.5 35.8 7.0 ?36.7 ?13 940 mhz 19.3 35.4 7.0 ?36.8 ?12 960 mhz 19.0 35.3 7.0 ?36.9 ?12 880 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1400 ma, p out = 54 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 865 mhz 20.3 35.8 7.0 ?36.2 ?14 880 mhz 20.1 35.8 7.0 ?36.5 ?14 895 mhz 19.7 35.5 7.0 ?36.0 ?11 features ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications this document contains information on a preproduc tion product. specifications and informatio n herein are subject to change without notice. document number: aft09s220--02n rev. 0, 9/2015 freescale semiconductor technical data 850?960 mhz, 54 w avg., 28 v airfast rf power ldmos transistor aft09s220--02nr3 figure 1. pin connections (top view) rf out /v ds 21 rf in /v gs om--780--2l plastic note: exposed backside of the package is the source terminal for the transistor. ? freescale semiconductor, inc., 2015. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft09s220--02nr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +70 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 74 ? c, 54 w cw, 28 vdc, i dq = 1400 ma, 940 mhz r ? jc 0.30 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 135 ? adc) v gs(th) 0.8 1.3 1.8 vdc gate quiescent voltage (v dd =28vdc,i d = 1400 ma) v gs(q) ? 2.2 ? vdc fixture gate quiescent voltage (4) (v dd =28vdc,i d = 1400 ma, measured in functional test) v gg(q) 4.0 4.4 4.8 vdc drain--source on--voltage (v gs =10vdc,i d =1.35adc) v ds(on) 0.05 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. v gg =2 ? v gs(q) . parameter measured on freescale test fixture, due to resistor divider network on the board. refer to test circuit schematic. (continued)
aft09s220--02nr3 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 54 w avg., f = 920 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 18.0 19.5 21.0 db drain efficiency ? d 34.4 35.8 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.5 7.0 ? db adjacent channel power ratio acpr ? ?36.7 ?34.2 dbc input return loss irl ? ?13 ?9 db load mismatch (in freescale test fixture, 50 ohm system) i dq = 1400 ma, f = 940 mhz, 100 ? sec(on), 10% duty cycle vswr 10:1 at 30 vdc, 240 w pulsed cw output power (3 db input overdrive from 220 w pulsed cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 920?960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 220 ? w am/pm (maximum value measured at the p3db compression point across the 920?960 mhz frequency range) ? ? ?10.6 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 70 ? mhz gain flatness in 40 mhz bandwidth @ p out =54wavg. g f ? 0.5 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.013 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.002 ? db/ ? c table 6. ordering information device tape and reel information package aft09s220--02nr3 r3 suffix = 250 units, 32 mm tape width, 13--inch reel om--780--2l 1. part internally matched both on input and output.
4 rf device data freescale semiconductor, inc. aft09s220--02nr3 figure 2. aft09s220--02nr3 test circuit component layout aft09s220--02n rev. 0 d52403 cut out area r2 r3 c1 c6 r1 c21* c2* c3 c11* c7 c8 c22 c13* c14* c15* c18* c19* c16* c20* c17* c5* c12* c4 c9 c10 c23 v gg v dd *c2, c5, c11, c12, c13, c14, c15, c16, c17, c18, c19, c20 and c21 are mounted vertically. table 7. aft09s220--02nr3 test circuit component designations and values part description part number manufacturer c1, c2, c3, c4, c5 47 pf chip capacitors atc100b470jt500xt atc c6, c7, c8, c9, c10 10 ? f chip capacitors c5750x7s2a106m230kb tdk c11, c12 6.2 pf chip capacitors atc100b6r2bt500xt atc c13, c14, c15, c16 1.7 pf chip capacitors atc100b1r7bt500xt atc c17 2.2 pf chip capacitor atc100b2r2jt500xt atc c18 2.0 pf chip capacitor atc100b2r0bt500xt atc c19 1.1 pf chip capacitor atc100b1r1bt500xt atc c20 0.2 pf chip capacitor atc100b0r2bt500xt atc c21 6.8 pf chip capacitor atc100b6r8ct500xt atc c22, c23 470 ? f, 63 v electrolytic capacitors 477cks050m illinois capacitor r1 10 ? , 1/4 w chip resistor crcw120610r0fkea vishay r2, r3 10 k ? , 1/4 w chip resistors crcw120610k0fkea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.66 d52403 mtl
aft09s220--02nr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) ?12 ?4 ?6 ?8 ?10 ?14 820 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 54 watts avg. 18.2 20.2 20 19.8 ?40 38 36 34 32 ?35 ?36 ?37 ?38 ? d , drain efficiency (%) g ps , power gain (db) 19.6 19.4 19.2 19 18.8 18.6 18.4 840 860 880 900 920 940 960 980 30 ?39 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?75 0 ? 15 ? 30 ? 60 1 200 imd, intermodulatio n distortion (dbc) ? 45 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 30 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 20 40 50 70 15 45 40 35 30 25 20 ? d ? drain efficiency (%) 60 ? d acpr parc acpr (dbc) ?48 ?30 ?33 ?36 ?42 ?39 ?45 19.6 g ps , power gain (db) 19.5 19.4 19.3 19.2 19.1 19 g ps ?5 1 acpr ? d g ps v dd =28vdc,p out =54w(avg.),i dq = 1400 ma im5--u im7--l im7--u 100 ?1 db = 28 w input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf ?2 db = 40.2 w ?3 db = 55 w im5--l im3--u ?2.8 ?2 ?2.2 ?2.4 ?2.6 ?3 parc (db) single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf parc v dd =28vdc,p out = 93 w (pep) i dq = 1400 ma, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz v dd =28vdc,i dq = 1400 ma, f = 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth irl im3--l
6 rf device data freescale semiconductor, inc. aft09s220--02nr3 typical characteristics 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 16 22 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 21 20 10 300 10 ?60 acpr (dbc) 19 18 17 0 ?30 ?40 ?50 figure 7. broadband frequency response 6 24 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 18 15 12 gain (db) 21 9 500 600 700 800 900 1000 1100 1200 1300 gain acpr ? d g ps 920 mhz v dd =28vdc,i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probab ility on ccdf 100 920 mhz 960 mhz 960 mhz 940 mhz 920 mhz 940 mhz 920 mhz 960 mhz 940 mhz ?15 15 10 5 0 ?5 ?10 irl (db) irl
aft09s220--02nr3 7 rf device data freescale semiconductor, inc. table 8. load pull performance ? maximum power tuning v dd =28vdc,i dq = 1400 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.43 ? j5.36 2.30 + j5.40 3.95 ? j2.04 17.4 54.9 306 55.7 ?4.5 940 2.73 ? j5.85 2.65 + j5.83 4.58 ? j1.60 17.2 54.8 303 55.2 ?4.2 960 3.29 ? j6.47 3.10 + j6.30 5.04 ? j1.02 17.0 54.9 311 56.5 ?4.7 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.43 ? j5.36 2.38 + j5.49 4.63 ? j1.21 15.1 55.9 387 59.5 ?7.3 940 2.73 ? j5.85 2.74 + j5.91 4.95 ? j0.67 15.0 55.8 384 59.2 ?7.0 960 3.29 ? j6.47 3.23 + j6.37 5.12 + j0.16 14.7 55.9 392 60.3 ?7.4 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 9. load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dq = 1400 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.43 ? j5.36 2.29 + j5.33 1.15 ? j1.10 20.7 52.1 164 70.0 ?13 940 2.73 ? j5.85 2.67 + j5.75 1.18 ? j1.16 20.7 51.8 151 69.5 ?13 960 3.29 ? j6.47 3.17 + j6.24 1.45 ? j1.23 20.2 52.3 169 71.1 ?12 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.43 ? j5.36 2.36 + j5.44 1.50 ? j1.06 18.2 53.7 232 73.1 ?16 940 2.73 ? j5.85 2.75 + j5.86 1.55 ? j1.09 18.2 53.4 221 73.0 ?16 960 3.29 ? j6.47 3.30 + j6.34 1.40 ? j1.20 18.3 52.9 193 74.5 ?19 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. aft09s220--02nr3 p1db ? typical load pull contours ? 940 mhz ?4 3 1 34 5 1 8 2 ?1 ?2 26 0 ?3 7 ?4 3 1 34 5 1 8 2 ?1 ?2 26 0 ?3 7 ?4 3 1 34 5 1 8 2 ?1 ?2 26 0 ?3 7 imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) ?4 3 1 imaginary ( ? ) 34 5 1 8 2 ?1 ?2 2 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) 6 0 ?3 7 p e 54 53.5 54 54.5 51 52 53 53.5 52.5 imaginary ( ? ) p e 54 56 58 60 62 64 66 68 17.5 18 17 18.5 19 p e 16.5 19.5 20 20.5 ?2 ?10 p e ?4 ?6 ?8 ?12 ?14 51.5
aft09s220--02nr3 9 rf device data freescale semiconductor, inc. p3db ? typical load pull contours ? 940 mhz ?4 3 1 34 5 1 8 2 ?1 ?2 26 0 ?3 7 ?4 3 1 34 5 1 8 2 ?1 ?2 26 0 ?3 7 ?4 3 1 34 5 18 2 ?1 ?2 26 0 ?3 7 imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) ?4 3 1 imaginary ( ? ) 34 5 18 2 ?1 ?2 2 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) 6 0 ?3 7 imaginary ( ? ) 54.5 53 53.5 52.5 p e 52 54 55 55.5 58 62 64 66 68 60 70 72 p e 14.5 15 17 p e 15.5 16 16.5 17.5 18 ?2 ?10 ?4 ?6 ?8 ?12 ?14 p e ?16 ?18
10 rf device data freescale semiconductor, inc. aft09s220--02nr3 c16* figure 16. aft09s220--02nr3 test ci rcuit component l ayout ? 865?895 mhz aft09s220--02n rev. 0 d52403 cut out area r2 r3 c1 c6 r1 c2* c3 c11* c7 c9* c17 c13* c14* c15* c5* c12* c4 c8 c18 v gg v dd c10* *c2, c5, c9, c10, c11, c12, c13, c14, c15, c16 and c19 are mounted vertically. c19* table 10. aft09s220--02nr3 test circuit c omponent designations and values ? 865?895 mhz part description part number manufacturer c1, c2, c3, c4, c5 56 pf chip capacitors atc100b560ct500xt atc c6, c7, c8 10 ? f chip capacitors c5750x7s2a106m230kb tdk c9 1.1 pf chip capacitor atc100b1r1bt500xt atc c10 1.5 pf chip capacitor atc100b1r5bt500xt atc c11, c12 3.9 pf chip capacitors atc100b3r9ct500xt atc c13, c14 5.1 pf chip capacitors atc100b5r1ct500xt atc c15 5.6 pf chip capacitor atc100b5r6ct500xt atc c16 10 pf chip capacitor atc100b100jt500xt atc c17, c18 470 ? f, 63 v electrolytic capacitors 477cks050m illinois capacitor c19 3.6 pf chip capacitor atc100b3r6ct500xt atc r1 10 ? , 1/4 w chip resistor crcw120610r0fkea vishay r2, r3 10 k ? , 1/4 w chip resistors crcw120610k0fkea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.66 d52403 mtl
aft09s220--02nr3 11 rf device data freescale semiconductor, inc. typical characteristics ? 865?895 mhz irl, input return loss (db) ?16 0 ?4 ?8 ?12 ?20 760 f, frequency (mhz) figure 17. single--carrier output peak--to--average ratio compression (parc) broa dband performance @ p out = 54 watts avg. 13 23 22 21 ?44 45 40 35 30 ?34 ?36 ?38 ?40 ? d , drain efficiency (%) g ps , power gain (db) 20 19 18 17 16 15 14 780 800 820 840 860 880 900 920 25 ?42 acpr (dbc) acpr ? d g ps v dd =28vdc,p out =54w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth ?3 ?1 ?1.5 ?2 ?2.5 ?3.5 parc (db) parc input signal par = 9.9 db @ 0.01% probabilit y on ccdf 1 p out , output power (watts) avg. figure 18. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 14 26 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 24 22 10 10 ?60 acpr (dbc) 20 18 16 0 ?30 ?40 ?50 acpr g ps v dd =28vdc,i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probab ility on ccdf 100 865 mhz 880 mhz 895 mhz 895 mhz 880 mhz 865 mhz 865 mhz 880 mhz 895 mhz ? d figure 19. broadband frequency response 16 22 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 20 19 18 gain (db) 21 17 700 750 800 850 900 950 1000 1050 1100 gain ?20 10 5 0 ?5 ?10 ?15 irl (db) irl
12 rf device data freescale semiconductor, inc. aft09s220--02nr3 table 11. load pull performance ? maximum power tuning v dd =28vdc,i dq = 1400 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 865 1.59 ? j4.58 1.62 + j4.38 2.93 ? j2.36 17.6 54.7 293 52.6 ?4.2 880 1.76 ? j4.85 1.77 + j4.63 3.10 ? j2.26 17.6 54.8 303 55.2 ?4.8 895 1.91 ? j5.04 1.95 + j4.91 3.45 ? j2.18 17.6 54.9 310 56.3 ?4.3 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 865 1.59 ? j4.58 1.65 + j4.47 3.54 ? j2.02 15.5 55.7 374 57.7 ?7.5 880 1.76 ? j4.85 1.82 + j4.73 3.77 ? j1.91 15.4 55.8 384 59.2 ?8.0 895 1.91 ? j5.04 2.01 + j5.00 4.09 ? j1.75 15.3 56.0 394 60.8 ?7.4 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 12. load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dq = 1400 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 865 1.59 ? j4.58 1.56 + j4.30 1.20 ? j0.95 20.7 52.8 189 68.2 ?10 880 1.76 ? j4.85 1.73 + j4.56 1.17 ? j1.06 20.6 52.7 188 69.7 ?11 895 1.91 ? j5.04 1.91 + j4.82 1.04 ? j1.03 21.0 52.2 167 71.3 ?13 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 865 1.59 ? j4.58 1.59 + j4.40 1.21 ? j0.82 18.8 53.4 220 71.7 ?16 880 1.76 ? j4.85 1.77 + j4.66 1.30 ? j0.91 18.6 53.6 231 73.1 ?16 895 1.91 ? j5.04 1.97 + j4.94 1.35 ? j0.96 18.5 53.7 235 74.8 ?16 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
aft09s220--02nr3 13 rf device data freescale semiconductor, inc. p1db ? typical load pull contours ? 880 mhz ?5 1 ?1 23 4 0 7 0 ?3 ?4 1 ?2 5 6 ?5 1 ?1 23 4 0 7 0 ?3 ?4 1 ?2 5 6 ?5 1 ?1 23 4 0 7 0 ?3 ?4 1 ?2 5 6 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p1db load pull output power contours (dbm) real ( ? ) ?5 1 ?1 imaginary ( ? ) 23 4 0 7 0 ?3 ?4 1 figure 21. p1db load pull efficiency contours (%) real ( ? ) figure 22. p1db load pull gain contours (db) real ( ? ) figure 23. p1db load pull am/pm contours ( ? ) real ( ? ) ?2 5 6 p e 51 54 p e 17.5 17 p e ?4 p e 52 52.5 53 53.5 54 54.5 53.5 56 58 60 62 64 66 68 18 19 20 21 18.5 19.5 20.5 ?6 ?8 ?10 ?12 ?14 ?16 ?2 ?4 51.5
14 rf device data freescale semiconductor, inc. aft09s220--02nr3 p3db ? typical load pull contours ? 880 mhz ?5 1 ?1 23 4 0 7 0 ?3 ?4 1 ?2 5 6 ?5 1 ?1 23 4 0 7 0 ?3 ?4 1 ?2 5 6 ?5 1 ?1 23 4 0 7 0 ?3 ?4 1 ?2 5 6 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 24. p3db load pull output power contours (dbm) real ( ? ) ?5 1 ?1 imaginary ( ? ) 23 4 0 7 0 ?3 ?4 1 figure 25. p3db load pull efficiency contours (%) real ( ? ) figure 26. p3db load pull gain contours (db) real ( ? ) figure 27. p3db load pull am/pm contours ( ? ) real ( ? ) ?2 5 6 p e 53.5 56 p e p e p e 53 54 54.5 55 55.5 54.5 58 60 62 64 66 68 70 15 15.5 16 16.5 17 17.5 18 18.5 19 ?2 ?4 ?6 ?8 ?10 ?12 ?14 ?16 ?18 52.5 52
aft09s220--02nr3 15 rf device data freescale semiconductor, inc. package dimensions
16 rf device data freescale semiconductor, inc. aft09s220--02nr3
aft09s220--02nr3 17 rf device data freescale semiconductor, inc.
18 rf device data freescale semiconductor, inc. aft09s220--02nr3 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 sept. 2015 ? initial release of data sheet
aft09s220--02nr3 19 rf device data freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft09s220--02n rev. 0, 9/2015 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc.

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